TLP250-DIP

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SCIx0983
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The TOSHIBA TLP250 consists of an infrared emitting diode and a integrated
photodetector.
This unit is an 8-lead DIP package.
TLP250 is suitable for gate driving circuits of IGBT or power MOSFET.
• Input threshold current: 5mA(max)
• Supply current : 11mA(max)
• Supply voltage : 10-35V
• Output current : ±1.5A (max)
• Switching time tpLH/tpHL): 0.5μs(max)
• Isolation voltage: 2500Vrms(min)
• UL-recognized: UL 1577, File No.E67349
• cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
• VDE-Approved: EN 60747-5- 5 (Note 1)



More Information
Brand Generic
GTIN 1,
IC type N/A
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Available

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1-2 Day

Free

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Inside Jordan

1 - 3 Days

3 JOD / Free Above 100 JOD

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General

3-5 Weeks