Specifications:

Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 11 A
Rds On - Drain-Source Resistance: 800 mOhms
Vgs - Gate-Source Voltage: - 30 V, 30 V
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: 150 C
Pd - Power Dissipation: 190 W