Specifications:

Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 10 A
Rds On - Drain-Source Resistance: 180 mOhms
Vgs - Gate-Source Voltage: - 20 V, 20 V
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: 175 C
Pd - Power Dissipation: 40 W