Specifications:

Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOIC-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 6 A
Rds On - Drain-Source Resistance: 72 mOhms
Vgs - Gate-Source Voltage: - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 21 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: 150 C
Pd - Power Dissipation: 5 W
Channel Mode: Enhancement
Series: SI4
Configuration: Single
Product Type: MOSFET
Unit Weight: 750 mg

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