2SK2611,Silicon N-Channel MOSFET,900V Drain-Source Voltage,9A Continuous Drain Current,TO-220F-3

The Toshiba 2SK2611 is a high-speed, high-voltage silicon N-channel MOSFET, designed for industrial applications requiring robust switching capabilities. With a maximum drain-source voltage of 900V and continuous drain current of 9A, this device is ideal for applications such as DC-DC converters, relay drive, and motor drive systems. Its low drain-source on-resistance (1.1Ohm typical) ensures efficient operation, while its high gate threshold voltage range (2.0–4.0V) provides excellent control characteristics.

Key Features :

• High Voltage Tolerance: Supports up to 900V drain-source voltage for high-power applications.
• High Continuous Current: Handles up to 9A continuous drain current for industrial-grade performance.
• Low RDS(on): Typical on-resistance of 1.1Ohm ensures efficient energy use and minimal power loss.
• Wide Gate Threshold Voltage: Vth range of 2.0–4.0V for reliable switching operation.
• Industrial-Grade Durability: Operates in temperatures from -55C to 150C.
• Compact and Robust Package: Housed in an SC-65 package for optimal heat dissipation.