JORD
IRFB31N20D ,N-Channel MOSFET - 200V, 31A, TO-220AB Package
JOD 2.50
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The IRFB31N20D is a high-performance N-Channel Power MOSFET designed for high-frequency switching applications such as DC-DC converters and SMPS. It offers a low on-state resistance of 0.082Ω and a high continuous drain current of 31A, making it ideal for high-efficiency systems. With a drain-source breakdown voltage of 200V and a maximum power dissipation of 200W, this MOSFET is built for robust performance in demanding environments.
Its TO-220AB package is compact yet capable of handling substantial power, making it a versatile choice for industrial and telecom power supplies. Additionally, the low gate charge and fully characterized avalanche energy ensure reliable switching with minimal losses.Key Features :
- High Drain-Source Breakdown Voltage: Rated at 200V for a wide range of high-voltage applications.
- High Continuous Drain Current: Capable of handling 31A of current at 25C, ensuring high power capacity.
- Low On-State Resistance (Rds): With only 0.082Ω, it minimizes conduction losses, enhancing system efficiency.
- Fast Switching Speed: Optimized for high-frequency applications with a low total gate charge of 107nC.
- Avalanche Rated: Fully characterized avalanche energy ensures reliable operation under harsh conditions.
- TO-220AB Package: Compact yet capable of high power dissipation, up to 200W, suitable for space-constrained designs.
| Operating Temperature | -55C To +175C |
|---|---|
| Mounting Style | Through Hole |
| Max Voltage | N/A |
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Stock |
Shipping Method |
ETA |
Cost |
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 |
Available |
Self Pickup |
1-2 Day |
Free |
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Available |
Inside Jordan |
1 - 3 Days |
3 JOD / Free Above 100 JOD |
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pre-order |
General |
3-5 Weeks |