IRFB3607,N-Channel MOSFET,TO-220, 75V, 80A

The IRFB3607 is an N-Channel HEXFET Power MOSFET designed for high-speed power switching in various demanding applications. With its low on-resistance (RDS(on)) and high continuous drain current (80A), it ensures efficient power management. The MOSFET is housed in a TO-220 package, ideal for through-hole mounting and heat dissipation, making it suitable for applications like uninterruptible power supplies (UPS), SMPS, and high-frequency circuits. Enhanced body diode dv/dt and avalanche capabilities provide robustness and reliability in high-stress operating conditions.

This MOSFET is perfect for engineers looking for a high-efficiency solution in power conversion and switching applications where both power density and reliability are critical.

• High Current Capability: 80A continuous drain current at 25C for high-power applications.
• Low On-Resistance: RDS(on) as low as 7.34 mOhm for efficient power management and reduced losses.
• High Voltage Capability: 75V drain-to-source breakdown voltage for high-speed power switching.
• Enhanced Ruggedness: Avalanche and dynamic dv/dt capability ensure reliable operation in demanding environments.
• Fast Switching: Fully characterized capacitance and avalanche SOA for high-speed operation.
• Applications: Ideal for high-efficiency synchronous rectification in SMPS, uninterruptible power supply (UPS), and high-frequency circuits.