Specifications :

Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 40
Maximum Collector-Emitter Voltage |Vce|, V: 360
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 30
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 80
Collector Capacity (Cc), typ, pF: 40
Total Gate Charge (Qg), typ, nC: 23