MPQ2907 - DIP

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SCIx1289
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The MPQ2907 is a transistor array consisting of 4 PNP bipolar junction transistors (BJTs) in a quad configuration. It is designed for through-hole mounting and comes in a 14-DIP package with a lead spacing of 0.300 inches (7.62mm). The package type is TO-116.

Each PNP transistor within the MPQ2907 array has the following specifications:

Maximum collector current (Ic): 600mA, indicating the maximum current that can flow through the collector terminal.
Maximum collector-emitter breakdown voltage: 40V, representing the maximum voltage that can be applied between the collector and emitter terminals.
Collector-emitter saturation voltage (Vce Saturation): 1.6V at a base current (Ib) of 30mA and a collector current (Ic) of 300mA. This indicates the voltage drop across the transistor when it is in the saturated state.
Maximum collector cutoff current (ICBO): 50nA, indicating the maximum leakage current that flows between the collector and emitter terminals when the transistor is reverse biased.
Minimum DC current gain (hFE): 50 at a collector current (Ic) of 300mA and a collector-emitter voltage (Vce) of 10V. This value represents the amplification factor of the transistor.
Maximum power dissipation: 650mW, indicating the maximum power that can be handled by the transistor without exceeding its specified temperature limits.
Transition frequency: 200MHz, representing the maximum frequency at which the transistor can operate effectively.
Operating temperature range: -65°C to 150°C (TJ), specifying the temperature limits within which the transistor can operate reliably.
The MPQ2907 transistor array is suitable for various applications, including amplification, switching, and signal processing in electronic circuits.

More Information
Brand Generic
GTIN 1,
IC type N/A
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