Specifications:

FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 5V
Rds On (Max) @ Id, Vgs : 270mOhm @ 5.5A, 5V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12 nC @ 5 V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 490 pF @ 25 V
Power Dissipation (Max) : 60W (Tc)