Specifications:

Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 330
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 40
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
Maximum Junction Temperature (Tj), ℃: 175
Collector Capacity (Cc), typ, pF: 59
Total Gate Charge (Qg), typ, nC: 143
Package: TO247