Specifications:

Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 60 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 260 pF
Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
Package: TO263