Specifications:

Type: IGBT
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 90
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 30
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.95
Maximum Junction Temperature (Tj), ℃: 150
Package: 2-16F1A