FF200R12KT3

SKU
SDIx0083
Brand
Part Number
FF200R12KT3
short Description
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Specifications:


Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 295 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 1050 W
Package/Case: 62 mm
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.9 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Width: 61.4 mm

More Information
Brand Generic
GTIN 11111111
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Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1 Day

Free

Available

inside UAE

2 - 3 Days

22 AED / Free Above 50 AED

Available

International

4 - 7 Days

180 AED / 49 $

pre-order

General

2 Weeks

 

FF200R12KT3

AED 390.00