MG75Q2YS50 N-CHANNEL IGBT MODULE

SKU: 20191470

Price:
165 AED

"Shipping: 3-6 days"

Stock:
In stock

Description

TOSHIBA MG75Q2YS50 N-CHANNEL IGBT MODULE SPECIFICATIONS :
Collector Current-Max (IC) : 100 A
Collector-emitter Voltage-Max : 1200 V
Configuration : SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Fall Time-Max (tf) : 300 ns
Gate-emitter Thr Voltage-Max : 6 V
Gate-emitter Voltage-Max : 20 V
Operating Temperature-Max : 150 Cel
Polarity/Channel Type : N-CHANNEL
Power Dissipation Ambient-Max : 600 W
Power Dissipation-Max (Abs) : 600 W
Time@Peak Reflow Temperature-Max (s) : NOT SPECIFIED
Transistor Application : MOTOR CONTROL
Transistor Element Material : SILICON
Turn-off Time-Nom (toff) : 500 ns
Turn-on Time-Nom (ton) : 50 ns
VCEsat-Max : 3.6 V

Payment & Security

Apple Pay Mada Mastercard Union Pay Visa

Your payment information is processed securely. We do not store credit card details nor have access to your credit card information.

You may also like

Recently viewed