MG75Q2YS50 N-CHANNEL IGBT MODULE

SKU: 20191470

Price:
165 AED
Stock:
In stock

Description

TOSHIBA MG75Q2YS50 N-CHANNEL IGBT MODULE SPECIFICATIONS :
Collector Current-Max (IC) : 100 A
Collector-emitter Voltage-Max : 1200 V
Configuration : SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Fall Time-Max (tf) : 300 ns
Gate-emitter Thr Voltage-Max : 6 V
Gate-emitter Voltage-Max : 20 V
Operating Temperature-Max : 150 Cel
Polarity/Channel Type : N-CHANNEL
Power Dissipation Ambient-Max : 600 W
Power Dissipation-Max (Abs) : 600 W
Time@Peak Reflow Temperature-Max (s) : NOT SPECIFIED
Transistor Application : MOTOR CONTROL
Transistor Element Material : SILICON
Turn-off Time-Nom (toff) : 500 ns
Turn-on Time-Nom (ton) : 50 ns
VCEsat-Max : 3.6 V

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