IRF840 N-Channel Power Mosfet

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SKU: 20190943

2.40 AED 3 AED

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N-Channel Power MOSFET

Continuous Drain Current (ID): 8A

Gate threshold voltage (VGS-th) is 10V (limit = ±20V)

Drain to Source Breakdown Voltage: 500V

Drain Source Resistance (RDS) is 0.85 Ohms

Rise time and fall time is 23nS and 20nS

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