BUT18A Silicon NPN Power Transistors

SKU: 20193475

18 AED
In stock


Type Designator: BUT18A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 110 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

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