BU2525DF Silicon Diffused Power Transistor

SKU: 20193610


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Type Designator: BU2525DF

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 13.5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 145 pF

Forward Current Transfer Ratio (hFE), MIN: 11

Noise Figure, dB: -

Package: SOT199

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