2N6849 P‑Channel MOSFET – 100 V, ‑6.5 A, TO‑39 Package

The 2N6849 is a high‑reliability P‑channel power MOSFET designed for demanding switching applications. Housed in a TO‑39 (TO‑205AF) metal can package, it offers robust thermal performance and is specified for military and industrial use. With a drain‑to‑source voltage rating of ‑100 V and continuous drain current of ‑6.5 A (at case temperature 25 °C), this device is suitable for power supply switching, motor control circuits, and other high‑reliability systems. The gate‑to‑source maximum voltage is ±20 V, and the device is qualified under MIL‑PRF‑19500 standards. The device is rated for 25 W power dissipation at TC = 25 °C and features a junction temperature range from –55 °C to +150 °C. The metal can form provides excellent heat sinking and reliability.

Key Features:

• P‑Channel enhancement‑mode MOSFET rated for ‑100 V drain‑to‑source breakdown voltage.
• Continuous drain current of ‑6.5 A at TC = 25 °C.
• Maximum gate‑to‑source voltage of ±20 V.
• Maximum power dissipation of 25 W at TC = 25 °C.
• Junction temperature range from –55 °C to +150 °C.
• TO‑39 (TO‑205AF) metal can package for reliability in harsh environments.

Additional Specifications:

• Type: P‑Channel Power MOSFET
• Max Voltage: 100V
• Max Current: 6.5A