FGPF4633,N-Channel Trench IGBT, 330V,70A,TO-220F

The FGPF4633 is a high-performance N-Channel Trench Insulated Gate Bipolar Transistor (IGBT), specifically designed for Plasma Display Panel (PDP) power supplies and other high-frequency power switching applications. Utilizing trench technology, this IGBT offers superior low conduction losses and fast switching capabilities.

With a collector-emitter voltage rating of 330V and a continuous collector current of 70A, the FGPF4633 is ideal for power conversion systems, industrial motor drives, and power factor correction circuits. The low V_CE(sat) of 1.55V ensures reduced power dissipation, making it an energy-efficient solution.

Optimized for fast switching, this IGBT features a turn-on delay of 8ns and a turn-off delay of 52ns, minimizing switching losses. The device comes in a TO-220F fully isolated package, ensuring enhanced thermal management and electrical insulation for safe operation in high-voltage applications.

• High Voltage and Current Rating: Supports 330V collector-emitter voltage (V_CEO) and 70A collector current, making it ideal for power applications.
• Low Saturation Voltage: Features a V_CE(sat) of 1.55V at 70A, minimizing conduction losses and improving efficiency.
• Fast Switching Capability: Optimized for high-frequency applications, with turn-on delay of 8ns and turn-off delay of 52ns.
• Power Dissipation: Rated for 30.5W maximum power dissipation, ensuring thermal efficiency in high-power circuits.
• High Input Impedance: Designed for MOS gate drive simplicity, making it easy to interface with microcontrollers and drivers.
• TO-220F Package: Fully isolated package design for efficient thermal management and enhanced safety in industrial applications.