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The FQA38N30 is an advanced N-Channel QFET MOSFET featuring a drain-source breakdown voltage of 300V and a continuous drain current of 38.4A. Designed using Fairchild's proprietary planar stripe technology, this MOSFET ensures high efficiency and superior switching performance. The device offers a low RDS(on) of 85mOhm (typical) at VGS = 10V and ID = 19.2A, making it ideal for power factor correction, power supplies, and other high-performance switching applications.
Its robust design and compliance with RoHS standards make it suitable for use in demanding environments. This MOSFET ensures reliable performance in power conversion, lamp ballast circuits, and communication systems.Key Features :
Operating Temperature | -55C To +150C |
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Mounting Style | Through Hole |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1-2 Day |
Free |
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Available |
Inside Jordan |
1 - 3 Days |
3 JOD / Free Above 100 JOD |
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pre-order |
General |
3-5 Weeks |