FQA38N30,N-Channel QFET MOSFET,300V,38.4A,TO-3PN

The FQA38N30 is an advanced N-Channel QFET MOSFET featuring a drain-source breakdown voltage of 300V and a continuous drain current of 38.4A. Designed using Fairchild's proprietary planar stripe technology, this MOSFET ensures high efficiency and superior switching performance. The device offers a low RDS(on) of 85mOhm (typical) at VGS = 10V and ID = 19.2A, making it ideal for power factor correction, power supplies, and other high-performance switching applications.

Key Features :

• High Voltage Tolerance: 300V drain-source voltage capability ensures reliability in high-power applications.
• High Current Capacity: Handles continuous drain current up to 38.4A, suitable for industrial-grade applications.
• Low On-Resistance: RDS(on) as low as 85mOhm minimizes power loss and increases efficiency.
• Efficient Switching: Fast switching times reduce switching losses and improve overall performance.
• Thermal Management: Junction-to-case thermal resistance of 0.43C/W for effective heat dissipation.
• Enhanced Durability: Avalanche energy handling up to 1500mJ and a rugged package for extended lifecycle.