IRFP9140N, P-Channel MOSFET, -100V, 23A, TO-247AC Package

The IRFP9140N is a high-performance, rugged P-Channel Power MOSFET that provides superior switching performance and high-power dissipation for applications requiring efficient and reliable power management. Designed to handle high-current and high-voltage switching, this MOSFET operates with a drain-source breakdown voltage of -100V and a continuous drain current of 23A, making it well-suited for power electronics, motor drivers, industrial controls, and high-efficiency power supplies.

With its low on-resistance (Rds(on)) of 0.117Ohm, the IRFP9140N minimizes conduction losses, enhancing efficiency in both low and high-frequency switching applications. The device’s gate charge of 160nC ensures fast and efficient switching performance, while its TO-247AC package offers enhanced heat dissipation, making it ideal for high-power circuits that operate in demanding environments.Key Features :

• Drain-Source Breakdown Voltage (Vds): -100V, ideal for high-voltage switching applications.
• Continuous Drain Current (Id): -23A, allowing for high power output and energy transfer.
• Low On-Resistance (Rds(on)): 0.117Ohm ensures minimal power loss and efficient switching.
• P-Channel MOSFET: Provides reverse polarity compared to N-channel MOSFETs, suitable for specific design needs.
• High Power Dissipation: Can dissipate up to 230W, making it suitable for high-power circuits.
• Gate-Source Threshold Voltage (Vgs(th)): Between -2.0V and -4.0V, offers flexible control for switching applications.