STW11NK100Z,N-Channel Power MOSFET,1000V,8.3A,TO-247-3

The STW11NK100Z is a high-performance N-Channel Power MOSFET featuring advanced SuperMESH technology. This device offers a drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 8.3A, making it ideal for high-voltage switching and energy-efficient designs. The Zener-protected gate improves reliability by shielding against potential voltage surges, while the TO-247 package ensures excellent thermal management.

With a typical Rds(on) of 1.1Ohm and low gate charge, the STW11NK100Z is optimized for applications requiring high switching speeds and low power loss. This MOSFET also boasts robust dv/dt ruggedness and a high avalanche energy rating, enabling it to withstand demanding operational conditions.

Key Features :

• Zener-protected for enhanced gate-source voltage handling.
• SuperMESH technology ensures low Rds(on) and efficient switching.
• Gate threshold voltage (Vgs(th)) of 3.75V for precise control.
• Excellent dv/dt ruggedness with 4.5 V/ns capability.
• High peak avalanche energy rating of 550mJ.
• TO-247 package for optimal thermal dissipation.