AE  
  • 0 My Wish List
  • My Cart 0
English Jordan English Jordan
STW11NK100Z,N-Channel Power MOSFET,1000V,8.3A,TO-247-3

STW11NK100Z,N-Channel Power MOSFET,1000V,8.3A,TO-247-3

SKU
SCTx3184
Part Number
STW11NK100Z
Brand:
STMicroelectronics
Categories:
Semiconductors, Transistors, MOSFET
Delivery in 2-5 Weeks.
Out of Stock
Be the first to review this product
Pre-Order
Out Of Stock
Add to Wish List

Notify me when this product is available:

Add to Compare
Ask for Quotation

Ask for Quotation

Guarantee safe & secure checkout

The STW11NK100Z is a high-performance N-Channel Power MOSFET featuring advanced SuperMESH technology. This device offers a drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 8.3A, making it ideal for high-voltage switching and energy-efficient designs. The Zener-protected gate improves reliability by shielding against potential voltage surges, while the TO-247 package ensures excellent thermal management.

With a typical Rds(on) of 1.1Ohm and low gate charge, the STW11NK100Z is optimized for applications requiring high switching speeds and low power loss. This MOSFET also boasts robust dv/dt ruggedness and a high avalanche energy rating, enabling it to withstand demanding operational conditions.

Key Features :

  • Zener-protected for enhanced gate-source voltage handling.
  • SuperMESH technology ensures low Rds(on) and efficient switching.
  • Gate threshold voltage (Vgs(th)) of 3.75V for precise control.
  • Excellent dv/dt ruggedness with 4.5 V/ns capability.
  • High peak avalanche energy rating of 550mJ.
  • TO-247 package for optimal thermal dissipation.
Operating Temperature -55C To +150C
Mounting Style Through Hole
Write Your Own Review
Only registered users can write reviews. Please Sign in or create an account
 

Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1-2 Day

Free

Available

Inside Jordan

1 - 3 Days

3 JOD / Free Above 100 JOD

pre-order

General

3-5 Weeks