AP88N30W,Power MOSFET,300V,48A

The AP88N30W is a powerful N-channel enhancement mode power MOSFET designed for high-efficiency switching and power management. It features a drain-source breakdown voltage of 300V and supports a continuous drain current of 48A. Its low on-state resistance of 48mOhm ensures minimal energy loss, making it ideal for applications requiring high power density and reliability.

Key Features :

• High Voltage Rating: 300V drain-source breakdown voltage for industrial-grade applications.
• Low On-State Resistance: 48mOhm resistance for reduced energy loss and higher efficiency.
• Thermal Performance: Junction-to-case thermal resistance of 0.4C/W for effective heat dissipation.
• Wide Temperature Range: Operates reliably in a temperature range of -55C to 150C.
• TO-3P Package: Durable and thermally efficient for industrial-grade applications.
• High Current Handling: Continuous drain current rating of 48A for power-intensive applications.