P65NF06 Power MOSFET, N-Channel, 60V,TO-220-3

The STMicroelectronics P65NF06 is a Power MOSFET featuring high switching efficiency and low on-resistance. It is designed for use in switching applications and DC-DC converters where low conduction losses and high reliability are required. This MOSFET has a Drain-Source Breakdown Voltage (Vds) of 60V and a Continuous Drain Current (Id) of 60A, making it ideal for handling substantial current loads while maintaining a compact form factor in the TO-220 package. With low RDS(on), high thermal efficiency, and superior avalanche characteristics, the P65NF06 offers optimal performance for power switching circuits.

This MOSFET is 100% avalanche tested to ensure reliable performance in high-stress conditions. It is commonly used in power supplies, motor controls, and various high-speed switching applications.

• N-Channel Power MOSFET designed for switching applications with low RDS(on) of 11.5mΩ.
• Drain-Source Breakdown Voltage (Vds) of 60V ensuring robust performance in high voltage applications.
• Continuous Drain Current (Id) rated at 60A at 25C and 42A at 100C for higher temperature environments.
• Total Dissipation Power of 110W, providing efficient heat management in demanding systems.
• Peak avalanche energy of 390mJ for enhanced ruggedness and reliability under transient conditions.
• Thermal resistance of 1.36C/W for efficient heat dissipation through the TO-220 package.