6R160C6, N-Channel Power MOSFET, TO-220 FullPAK Package

The 6R160C6 is an N-channel enhancement mode power MOSFET designed for high-voltage, high-speed switching applications. With a drain-source voltage rating of 600 V and a continuous drain current of 23.8 A, it is well-suited for high-power applications such as power supplies, converters, and motor drivers. The MOSFET's low on-resistance of 0.16 Ω reduces conduction losses, while its fast switching capabilities enhance performance in high-speed circuits. Encased in a standard TO-220 FullPAK package, the 6R160C6 offers robust thermal performance with a maximum power dissipation of 34 W, making it a reliable choice for various power management applications.

• High Drain-Source Voltage: Withstands up to 600 V, suitable for high-voltage applications.
• High Continuous Drain Current: Rated at 23.8 A, ideal for substantial power requirements.
• Low On-Resistance: Features an R_DS(on) of 0.16 Ω, minimizing conduction losses.
• Fast Switching Speed: Optimized for rapid switching applications, enhancing efficiency.
• Robust Power Dissipation: Capable of dissipating up to 34 W, ensuring reliability under various conditions.
• Standard TO-220 FullPAK Package: Facilitates easy mounting and efficient heat dissipation.