SPW17N80C3,N-Channel MOSFET,800V,17A,TO-247-3

The SPW17N80C3 is a high-performance N-Channel MOSFET designed for high-voltage and high-efficiency applications. With a drain-source voltage (Vds) of 800V and a continuous drain current (Id) of 17A, this MOSFET is suitable for a range of power electronics, including power supplies, converters, and industrial equipment. Its TO-247-3 package allows for efficient heat management, making it reliable for demanding environments. The device utilizes Infineon’s advanced CoolMOS™ technology, which offers low RDS(on), ensuring lower conduction losses and greater efficiency.

Engineered with low gate charge and fast switching characteristics, the SPW17N80C3 provides excellent performance for high-speed switching applications. It is designed to withstand challenging conditions, with periodic avalanche capability and robust dv/dt rating, ensuring long-term reliability.

• Advanced high-voltage CoolMOSâ„¢ technology with low RDS(on) of 0.29 Ω.
• Maximum drain-source voltage (Vds) of 800V ensures robust performance.
• Continuous drain current (Id) up to 17A for reliable high-power applications.
• Low gate charge and high efficiency, suitable for power supplies.
• TO-247-3 package for effective heat dissipation and easy mounting.
• Periodic avalanche rated for increased durability.