IXFN38N100Q2, N-Channel Power MOSFET, SOT-227B

The IXFN38N100Q2 is a rugged, high-voltage N-channel MOSFET designed for high-speed, high-efficiency switching applications. It utilizes IXYS' HiPerFET™ technology for low gate charge and low intrinsic gate resistance, making it suitable for resonant-mode power supplies, DC choppers, pulse generators, and industrial inverters. Housed in a SOT-227B (miniBLOC) package with aluminum nitride isolation, it supports high voltage and current densities in compact layouts.

Key Features:

• High Voltage Rating: Withstands up to 1000 V drain-source voltage.
• High Current Capability: Continuous drain current of 38 A at 25°C.
• Low R_DS(on): Maximum of 250 mΩ, ensuring high conduction efficiency.
• Fast Switching: Rise and fall times as low as 28 ns and 15 ns respectively.
• Avalanche Rated: Capable of withstanding unclamped inductive switching energy (E_AS = 5 J).
• High Power Dissipation: Rated at 890 W, making it suitable for power-dense applications.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 38A
• Drain-Source Breakdown Voltage (Vds): 1000V
• Gate-Source Threshld Voltage (Vgs th): 3-5.5V
• Power Dissipation: 890W
• Operating Temprature: -55+150°C