IRF1010E,N-Channel MOSFET,60V,84A,TO-220AB

The IRF1010E is a high-power, N-channel HEXFET MOSFET from International Rectifier designed for a wide range of commercial-industrial applications. With a maximum drain-source voltage (V_DSS) of 60V and an exceptional drain current capacity of up to 84A, it is ideal for power supply circuits, DC-DC converters, and motor control applications. Its ultra-low on-resistance (R_DS(on)) of just 12mΩ reduces energy loss, while the fast switching and dynamic dv/dt rating make it suitable for high-speed switching environments.

The MOSFET features high-temperature tolerance with an operational junction temperature of up to 175C, ensuring reliable performance even in harsh conditions. Its fully avalanche rated design enhances robustness and protection against electrical stress, making it an excellent choice for use in high-reliability systems. The TO-220AB package, with its low cost and efficient thermal management, further complements its application in high-power circuits.

• Low On-Resistance (RDS(on)): 12mΩ, ensuring minimal energy loss and efficient power transfer.
• High Current Capacity: Continuous Drain Current up to 84A, perfect for high-power applications.
• Fast Switching: Designed for fast switching, providing improved performance in applications requiring high switching speeds.
• High-Temperature Operation: Capable of operating at a junction temperature up to 175C for high-reliability in demanding environments.
• Fully Avalanche Rated: Provides protection against high-energy pulses, ensuring longer lifespan.
• Durable TO-220AB Package: Widely accepted industry-standard package, featuring low thermal resistance and excellent heat dissipation.