SSP45N20A,N-Channel Power MOSFET,200V,35A,TO-220

The SSP45N20A is a robust N-channel power MOSFET designed for high-efficiency switching applications. With a breakdown voltage of 200V and a continuous drain current of 35A, it is suitable for various industrial and commercial uses. Its low RDS(on) of 0.065Ω minimizes conduction losses, while its avalanche ruggedness ensures reliable operation under demanding conditions. The advanced power MOSFET technology employed in this device provides lower input capacitance and improved switching efficiency, making it ideal for motor drives, power supplies, and DC-DC converters.

Key Features :

• High Voltage and Current Rating: 200V drain-source voltage and 35A continuous drain current.
• Low On-Resistance: RDS(on) of 0.065Ohm minimizes energy loss.
• Enhanced Thermal Efficiency: Maximum power dissipation of 176W and junction-to-case thermal resistance of 0.71C/W.
• Fast Switching: Low gate charge of 45nC and turn-on/off delay times for efficient performance.
• Rugged Design: Avalanche ruggedness and repetitive avalanche energy capability of 17.6mJ.
• Extended Operating Temperature: Wide temperature range of -55C to +150C.