K3878,N-Channel MOSFET,900V, 12A, TO-3P

The K3878 is a high-power N-Channel MOSFET designed for high-efficiency switching applications. With a Drain-Source Breakdown Voltage (Vds) of 900V and a Continuous Current Drain (Id) of 12A, this MOSFET is ideal for power supplies, converters, and motor drive circuits. Its low Gate-Source Threshold Voltage (Vgs th) allows for easy control and operation in various designs. Packaged in a TO-3P form factor, the K3878 offers excellent heat dissipation, making it a reliable choice for industrial and high-power applications.

The MOSFET features a maximum Power Dissipation of 100W and operates within a wide temperature range, ensuring stable and reliable performance under harsh conditions. With its high power-handling capability and efficient switching, the K3878 is suitable for a variety of demanding applications such as high-voltage power supplies, automotive electronics, and motor control systems.

• High Voltage and Current Capacity: The K3878 can handle up to 900V Drain-Source voltage and a maximum current of 12A.
• N-Channel MOSFET: Designed for high-efficiency power switching applications, making it ideal for power supplies and converters.
• TO-3P Package: This compact and durable package ensures effective heat dissipation, making it suitable for high-power applications.
• Low Gate Threshold Voltage: With a low Gate-Source Threshold Voltage, the MOSFET is easy to drive in various control applications.
• High Power Dissipation: Capable of dissipating up to 100W, making it suitable for demanding power applications.
• Operating Temperature Range: Wide operating temperature range, making it suitable for industrial and automotive applications.