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IRF2907ZS-7PPbF,HEXFET Power MOSFET,75V,160A,D2PAK

IRF2907ZS-7PPbF,HEXFET Power MOSFET,75V,160A,D2PAK

SKU
SCTx2575
Part Number
64-2096PBF
Brand:
Infineon
Categories:
Semiconductors, Transistors, MOSFET
JOD 4.45
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Estimated Delivery: 2-3 Weeks
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The IRF2907ZS-7PPbF is a high-performance HEXFET Power MOSFET designed for low resistance and high current applications. Its advanced process technology ensures fast switching, low gate charge, and enhanced thermal reliability. With a drain-source breakdown voltage of 75V, a continuous drain current of up to 160A, and a low RDS(on) of 3.8mOhm, this device is optimized for demanding industrial, automotive, and server applications.

It is housed in a robust D2PAK package for efficient heat dissipation and secure PCB mounting. Its rugged design also supports repetitive avalanche energy dissipation, ensuring reliability in dynamic conditions.

Key Features :

  • Advanced HEXFET Technology: Provides ultra-low RDS(on) and improved switching efficiency.
  • High Current Capability: Rated at 160A continuous drain current (Tc=25C).
  • Low On-Resistance: Maximum RDS(on) of 3.8mOhm at VGS = 10V.
  • Thermal Stability: Operates up to 175C junction temperature.
  • Repetitive Avalanche Rated: Supports rugged switching applications.
  • Compact Package: Encased in a D2PAK for enhanced thermal performance.
More Information
Estimated Delivery 2-3 Weeks
Operating Temperature -55C To +175C
Mounting Style Through Hole
Max Voltage N/A
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3-5 Weeks