2SD850, NPN Power Transistor, TO-3 Package

The 2SD850 is a silicon NPN power transistor housed in a TO-3 metal case. It is designed for high-voltage, high-speed switching applications, particularly in line-operated horizontal deflection output circuits. Its high breakdown voltage and fast switching capabilities make it suitable for various high-power applications.

• High Breakdown Voltage: Collector-Base Voltage (V_CB) rated at 1500V, suitable for high-voltage applications.
• High-Speed Switching: Designed for rapid switching applications, enhancing performance in dynamic circuits.
• Low Collector Saturation Voltage: Ensures efficient operation with minimal power loss.
• High Reliability: Engineered for dependable performance in demanding environments.
• TO-3 Package: Provides excellent heat dissipation and mechanical stability.
• Enhanced Power Dissipation: Capable of handling up to 65W power dissipation, ensuring stable operation in high-power applications.