IXTP76N075T, N-Channel Power MOSFET, TO-220-3 Package

The IXTP76N075T is a silicon N-channel enhancement mode power MOSFET housed in a TO-220-3 package. It is designed for high-current switching applications, DC/DC converters, and other high-power circuits. The device's low on-resistance, high current handling capability, and fast switching speed make it suitable for various demanding applications. Additionally, it is fully characterized for avalanche performance, ensuring robustness in applications prone to inductive transients.

• Low On-Resistance: Exhibits a maximum drain-source on-resistance (R_DS(on)) of 12 mΩ at V_GS = 10V, ensuring efficient current flow with minimal voltage drop.
• High Current Handling: Supports a continuous drain current (I_D) of 76A at T_C = 25°C, accommodating substantial power loads.
• High Power Dissipation: Capable of dissipating up to 176W at T_C = 25°C, suitable for high-power applications.
• Fast Switching Speed: Designed for rapid switching applications, enhancing performance in high-speed circuits.
• Avalanche Rated: Fully characterized for unclamped inductive switching (UIS), ensuring robustness in demanding applications.
• Wide Operating Temperature Range: Operates reliably within a junction temperature range of -55°C to 175°C, suitable for various environmental conditions.