20N60A4, 600V, 20A N-Channel IGBT, TO-220-3

The 20N60A4 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), welding equipment, and induction heating systems. With a Collector-Emitter Voltage (V_CE) rating of 600V and a Continuous Collector Current of 20A at 25°C, the 20N60A4 provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of approximately 1.8V at 20A minimizes conduction losses, while a typical fall time of 55ns at 125°C ensures efficient high-speed switching. Encased in a TO-220-3 package, the 20N60A4 offers ease of integration into various circuit designs. Its thermal performance, with a Maximum Power Dissipation of 290W at 25°C, ensures reliable operation under thermal stress.

• High Voltage Capability: With a Collector-Emitter Voltage (V_CE) rating of 600V, suitable for high-voltage applications.
• Moderate Current Handling: Capable of handling a Continuous Collector Current of 20A at 25°C.
• Low Saturation Voltage: Features a low Collector-Emitter Saturation Voltage (V_CE(sat)) of approximately 1.8V at 20A, reducing conduction losses.
• Fast Switching Performance: Designed for high-speed operation with a typical fall time of 55ns at 125°C, enhancing efficiency in switching applications.
• Standard TO-220-3 Package: Encased in a TO-220-3 package, facilitating easy integration into various circuit designs.
• Thermal Performance: Offers a Maximum Power Dissipation of 290W at 25°C, ensuring reliable operation under thermal stress.