HIP0061, 3-Transistor Common Source ESD Protected Power MOSFET Array, 60V, 3.5A

The HIP0061 is a power MOSFET array comprising three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. Designed using advanced Harris PASIC2 process technology, it offers outstanding device performance and ruggedness. Each transistor supports output voltages up to 60V and continuous currents up to 3.5A, with a pulsed current capacity of 10A. The low on-resistance of 0.225Ω per transistor at V_GS = 10V minimizes conduction losses, making it suitable for applications such as motor controls, lamps, solenoids, and resistive loads. The device is 100% avalanche tested with an energy rating of 100mJ per transistor, ensuring reliability under demanding conditions. Additionally, the HIP0061 features ESD protection, enhancing its durability in sensitive applications.

• Integrated N-Channel MOSFETs: Contains three matched N-Channel enhancement mode MOS transistors in a common source configuration.
• High Output Voltage: Supports output voltages up to 60V, suitable for various high-voltage applications.
• Significant Current Handling: Each transistor can handle continuous currents up to 3.5A, with a pulsed current capacity of 10A.
• Low On-Resistance: Features a maximum R_DS(on) of 0.225Ω per transistor at V_GS = 10V, minimizing conduction losses.
• Robust Design: Each transistor is 100% avalanche tested with an energy rating of 100mJ, ensuring ruggedness and reliability.
• ESD Protection: Incorporates ESD protection, enhancing device durability in sensitive applications.