2SA1941,PNP Silicon Triple Diffused BJT, 140V, 10A, TO-3P

The 2SA1941 is a PNP silicon triple diffused bipolar junction transistor (BJT) designed for power amplification. Featuring a high collector-emitter breakdown voltage of -140V and a maximum collector current of -10A, this transistor is well-suited for demanding audio frequency amplifier applications. Its efficient thermal dissipation is facilitated by the TO-3P package, making it ideal for prolonged high-power usage. The 2SA1941 is commonly recommended for use in 70-W high-fidelity audio amplifier output stages and can be paired with its complementary NPN transistor, 2SC5198, to achieve optimal audio amplification performance. This reliable component ensures high breakdown voltage and robust operation, making it a trusted choice for high-power electronic designs.

• High Breakdown Voltage: Ensures efficient performance with a collector-emitter breakdown voltage (VCEO) of -140V, suitable for high-voltage applications.
• High Current Capability: Supports a maximum collector current (IC) of -10A, ideal for power amplification tasks.
• Designed for Audio Amplifiers: Recommended for 70-W high-fidelity audio frequency amplifier output stages.
• Complementary Pair: Can be used alongside 2SC5198 for enhanced performance in audio applications.
• TO-3P Package: Efficient thermal management with TO-3P package, suitable for high-power dissipation.
• Reliable Operation: Robust design to handle continuous operation under varying loads.