FQPF3N80C,N-Channel Power MOSFET,TO-220F

The FQPF3N80C is a high-performance N-Channel Power MOSFET designed for high-voltage applications, including switch-mode power supplies, industrial power regulation, and motor control. Built using advanced planar stripe DMOS technology, this MOSFET minimizes on-state resistance while offering fast switching speeds and high energy pulse endurance in avalanche conditions.

With a Drain-Source Breakdown Voltage (Vds) of 800V and a Continuous Drain Current (Id) of 3A, this MOSFET is ideal for high-power applications. Its low gate charge (13 nC) ensures efficient operation, reducing power consumption in switching circuits. The fully insulated TO-220F package provides enhanced thermal dissipation and electrical isolation for improved reliability.

Engineered for high-speed switching and low conduction losses, the FQPF3N80C is well-suited for power conversion, industrial automation, and high-voltage power regulation. Its rugged design ensures long-term reliability in demanding applications.

• High Voltage Rating: Supports up to 800V Drain-Source Breakdown Voltage (Vds) for high-power applications.
• Efficient Power Handling: Features a Continuous Drain Current (Id) of 3A with a peak rating of 12A.
• Low On-Resistance: Reduces power loss with an RDS(on) of 4.8Ω at VGS = 10V.
• Fast Switching Performance: Optimized for high-efficiency power conversion and switch-mode power supplies.
• Durable TO-220F Package: Fully isolated for enhanced thermal dissipation and safety in high-voltage circuits.
• Wide Operating Temperature Range: Functions effectively from -55°C to +150°C, ensuring stability in demanding environments.