FQA9N90C,N-Channel MOSFET,900V,9A,TO-3P

The FQA9N90C is a high-voltage N-Channel MOSFET, designed to handle up to 900V across the drain and source, with a continuous drain current rating of 9A. Packaged in a TO-3P form, this MOSFET offers excellent heat dissipation and high power handling, making it ideal for use in power supplies, motor drives, industrial systems, and other high-voltage switching applications.

This MOSFET has a Gate-Source Threshold Voltage (Vgs th) of 3V to 5V, allowing for easy control with standard logic levels. With a power dissipation rating of up to 300W, it can reliably manage high power loads while operating across a temperature range from -55C to +150C. Its rugged design ensures reliable performance even in demanding environments, making it a versatile solution for high-power switching and amplification circuits.

• High voltage N-Channel MOSFET with a 900V Drain-Source Breakdown Voltage (Vds).
• Continuous Drain Current (Id) rated at 9A for high-power applications.
• Features a Gate-Source Threshold Voltage (Vgs th) of 3V to 5V for easy control.
• Packaged in a TO-3P form factor for efficient heat dissipation and high power handling.
• Capable of dissipating up to 300W of power, suitable for high power switching circuits.
• Wide operating temperature range from -55C to +150C, making it reliable in harsh environments.