JORD
IRF2907ZS-7PPbF,HEXFET Power MOSFET,75V,160A,D2PAK
AEDÂ 18.00
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The IRF2907ZS-7PPbF is a high-performance HEXFET Power MOSFET designed for low resistance and high current applications. Its advanced process technology ensures fast switching, low gate charge, and enhanced thermal reliability. With a drain-source breakdown voltage of 75V, a continuous drain current of up to 160A, and a low RDS(on) of 3.8mOhm, this device is optimized for demanding industrial, automotive, and server applications.
It is housed in a robust D2PAK package for efficient heat dissipation and secure PCB mounting. Its rugged design also supports repetitive avalanche energy dissipation, ensuring reliability in dynamic conditions.Key Features :
- Advanced HEXFET Technology: Provides ultra-low RDS(on) and improved switching efficiency.
- High Current Capability: Rated at 160A continuous drain current (Tc=25C).
- Low On-Resistance: Maximum RDS(on) of 3.8mOhm at VGS = 10V.
- Thermal Stability: Operates up to 175C junction temperature.
- Repetitive Avalanche Rated: Supports rugged switching applications.
- Compact Package: Encased in a D2PAK for enhanced thermal performance.
| Operating Temperature | -55C To +175C |
|---|---|
| Mounting Style | Through Hole |
| Max Voltage | N/A |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
Urban Areas in UAE |
1 - 2 Days |
AED 15 / Free Above AED 100 |
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Available |
Remote Areas in UAE |
2 - 3 Days |
AED 15 / Free Above AED 100 |
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Available |
International |
4 - 7 Days |
AED 180 / $ 49 |
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Pre-Order |
General |
4-5 Weeks |