IRF2907ZS-7PPbF,HEXFET Power MOSFET,75V,160A,D2PAK

The IRF2907ZS-7PPbF is a high-performance HEXFET Power MOSFET designed for low resistance and high current applications. Its advanced process technology ensures fast switching, low gate charge, and enhanced thermal reliability. With a drain-source breakdown voltage of 75V, a continuous drain current of up to 160A, and a low RDS(on) of 3.8mOhm, this device is optimized for demanding industrial, automotive, and server applications.

Key Features :

• Advanced HEXFET Technology: Provides ultra-low RDS(on) and improved switching efficiency.
• High Current Capability: Rated at 160A continuous drain current (Tc=25C).
• Low On-Resistance: Maximum RDS(on) of 3.8mOhm at VGS = 10V.
• Thermal Stability: Operates up to 175C junction temperature.
• Repetitive Avalanche Rated: Supports rugged switching applications.
• Compact Package: Encased in a D2PAK for enhanced thermal performance.