BD677,NPN Power Darlington Transistor, TO-126

The BD677 is a silicon NPN power Darlington transistor housed in a compact TO-126 package. It features a monolithic Darlington configuration, providing a high DC current gain with a minimum h_FE of 750 at I_C = 1.5 A and V_CE = 3 V. This makes it suitable for applications requiring high amplification, such as audio amplifiers and industrial equipment. The integrated antiparallel collector-emitter diode enhances performance in switching applications by providing flyback protection. The transistor can handle a collector current of up to 4 A and dissipate up to 40 W of power at T_C = 25°C, making it suitable for medium power applications. The BD677 is complemented by the BD678, which is the PNP counterpart, allowing for versatile design options in various electronic circuits.

• High DC Current Gain – Minimum h_FE of 750 at I_C = 1.5 A, V_CE = 3 V, suitable for applications requiring high amplification.
• Monolithic Darlington Configuration – Provides high current gain and simplifies circuit design.
• Integrated Antiparallel Collector-Emitter Diode – Enhances performance in switching applications by providing flyback protection.
• Moderate Power Dissipation – Capable of dissipating up to 40 W at T_C = 25°C, suitable for medium power applications.
• Compact TO-126 Package – Facilitates efficient heat dissipation and easy integration into various circuit designs.
• Complementary PNP Version Available – BD678 is the complementary PNP counterpart, allowing for versatile design options.