2SK659, N-Channel MOSFET, TO-220 Package

The 2SK659 is an N-channel MOSFET designed for high-power switching applications, such as solenoid, motor, and lamp drivers. With a drain-source voltage rating of 60 V and a continuous drain current of 12 A, it is well-suited for various power control applications. The MOSFET's low on-resistance of 0.075 Ω reduces conduction losses, while its fast switching capabilities, with a rise time of 75 ns, enhance performance in high-speed circuits. Encased in a standard TO-220 package, the 2SK659 offers robust thermal performance, making it a reliable choice for demanding power management applications.

• High Drain Current: Capable of handling up to 12 A, suitable for high-power applications.
• Low On-Resistance: R_DS(on) of 0.075 Ω, minimizing conduction losses.
• High Drain-Source Voltage: Withstands up to 60 V, ideal for various power switching applications.
• Fast Switching Speed: Rise time of 75 ns, enhancing efficiency in high-speed operations.
• Robust Power Dissipation: Capable of dissipating up to 35 W, ensuring reliability under demanding conditions.
• Standard TO-220 Package: Facilitates easy mounting and effective heat dissipation.