NJW0281G, NPN Power Transistor, TO-3P

The NJW0281G is a high-power NPN bipolar junction transistor from ON Semiconductor, optimized for audio power amplifiers and other linear applications requiring high gain, high voltage, and robust current capabilities. Housed in a thermally efficient TO-3P package, it delivers superior gain linearity and rugged operating characteristics, making it suitable for both professional and high-end consumer audio equipment.

Key Features:

• High Collector-Emitter Voltage: Withstands up to 250V.
• High Collector Current: Supports continuous current up to 15A.
• High Power Dissipation: Rated at 150W with excellent thermal performance.
• Excellent Gain Linearity: Ideal for linear amplification and audio output stages.
• Complementary Pair Ready: Matches well with NJW0302G (PNP).
• High Safe Operating Area (SOA): Ensures reliability in high-power designs.

Additional Specifications:

• Mounting Style: Through-Hole
• Maximum DC Collector Current (Ic): 15A
• Collector-Emitter Voltage (VCEO) Max: 250V
• Collector-Base Voltage (VCBO): 250V
• Emitter-Base Voltage (VEBO): 5V
• Power Dissipation: 150W
• Operating Temprature: -65+150°C