IRFP260N,HEXFET Power MOSFET,200V Vds,50A Id

The IRFP260N is a high-efficiency HEXFET power MOSFET designed for various high-power applications. It features advanced process technology for low resistance and high current capacity. This device is suitable for switching operations in industrial equipment, power supplies, and motor control systems, thanks to its robust design and low Rds(on) value. With a 175C maximum junction temperature, it provides reliable performance in demanding environments.

The TO-247 package ensures optimal heat dissipation and easy integration into power circuits. Its high-speed switching characteristics make it a preferred choice for fast-switching circuits and low-loss applications. Additionally, the IRFP260N is avalanche rated and offers ease of paralleling for enhanced power handling.

Key Features :

• Advanced HEXFET technology for efficient switching and low Rds(on) of 0.04Ω.
• High continuous drain current rating of 50A at 25C.
• Drain-Source breakdown voltage of 200V for high-power handling.
• Fully avalanche rated for enhanced ruggedness.
• 300W power dissipation ensures reliability in heavy-duty applications.
• Wide operating temperature range of -55C to 175C for demanding conditions.