MBM29F160BE-70PFTN, 16Mbit (2M x 8 / 1M x 16) CMOS Flash Memory, 70ns Access Time, 5V, TSOP-48

The MBM29F160BE-70PFTN is a 16Mbit CMOS Flash Memory developed for high-speed embedded systems, industrial controllers, and firmware storage applications. It features sector-based erase architecture, allowing for efficient memory management while preserving unmodified data.

Operating with a single 5V power supply, the MBM29F160BE-70PFTN eliminates the need for high-voltage programming, making it ideal for in-system reprogramming. The embedded erase and program algorithms handle memory operations automatically, reducing processor workload.

With an access time of 70ns, this flash memory supports high-speed read operations, making it ideal for real-time computing, automotive applications, and consumer electronics. The memory layout is flexible, allowing configurations of 2M x 8-bit or 1M x 16-bit, depending on system requirements.

The TSOP-48 package enables efficient integration into compact circuit designs, making it suitable for space-constrained applications.

• 16Mbit Flash Memory: Organized as 2M x 8-bit or 1M x 16-bit, providing versatile data storage solutions.
• Fast 70ns Access Time: Ensures rapid read operations, making it suitable for high-performance applications.
• Single 5V Power Supply: Eliminates the need for a high-voltage programming supply, simplifying system integration.
• Embedded Erase & Program Algorithms: Includes automated erase and program functions, enhancing ease of use.
• Sector Erase Architecture: Supports sector-based erase (8KB, 16KB, 32KB, and 64KB sectors) for selective data modification.
• TSOP-48 Package: Compact 48-pin Thin Small Outline Package (TSOP) for space-efficient PCB integration.